 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HTS138-600 HTS138-600 INSULATION TYPE TRIAC (TO-220F) VDRM = 600 V IT(RMS) = 12A FEATURES Symbol Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=12A) High Commutation dv/dt Isolation Voltage (VISO=1500VAC) 3.T2 2.Gate 1.T1 TO-220F General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1. T1 2. Gate 3. T2 Absolute Maxim um Ratings Symbol VDRM IT(RMS) ITSM V GM IGM PGM V ISO TSTG Tj (Ta=25) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current (Tc = 58 ) Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate Voltage Peak Gate Current Peak Gate Power Dissipation Isolation Breakdown Voltage (RMS AC 1min) Storage Temperature Range Operating Temperature V alue 600 12.0 100/110 10 2.0 5.0 1500 -40 to +125 -40 to +125 U nits V A A V A W V SEMIHOW REV.1.0 Jan 2006 HTS138-600 Electrical Characteristics Symbol IGT VGT V GD (dv/dt)c Parameter Gate Trigger Current Gate Trigger Voltage (Ta=25) Test Conditions , VD=6V RL=10 VD=6V RL=10 , M in Typ M ax 25 1.5 Units mA V V Non Trigger Gate Tj =125 VD=1/2VDRM , Voltage Critical Rate of Rise of , Tj =125 VD=2/3VDRM Off-State Voltage at (di/dt)c=-4A/ms Communication Holding Current Repetitive Peak OffState Current ave, VD=VDRM, Single Phase, Half W Tj =125 0.2 10.0 V/uS IH IDRM V TM 15.0 2.0 1.65 mA mA V Peak On-State V oltage IT=6A, Inst, Measurement Thermal Characteristics Symbol RTH(j-c) Parameter Thermal Resistance Test Conditions Junction to Case M in Typ M ax 3.7 Units /W SEMIHOW REV.1.0 Jan 2006 HTS138-600 Performance Curves Fig 1. Gate Characteristics 101 101 Fig 2.On-State Voltage Gate Voltage (V) On-state Current (A) 100 100 10-1 101 102 103 10-1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current (mA) On-state Voltage (V) Fig 3. Gate Trigger Voltage vs. Junction Temperature 10 20 18 Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation (W) 16 14 12 10 8 6 4 2 VGT(t) VGT(25) 1 0.1 -50 0 50 100 150 0 0.0 3 6 9 12 15 Junction Temperature () RMS On-State Current (A) Fig 5. On State Current vs. Allowable Case Temperature 130 120 Fig 6. Surge On-State Current Rating (Non-Repetitive) Surge On-State Current (A) Allowable Case Temp () 120 100 110 80 100 60 90 40 80 20 70 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 100 101 102 RMS On-State Current (A) Time (Cycles) SEMIHOW REV.1.0 Jan 2006 HTS138-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig8. Transient Thermal Impedance Transient Thermal Impedance (/W) IGT(t) IGT(25) 1 I+GT1 I-GT1 I-GT3 1 I+GT3 0.1 -50 0 50 100 150 0.1 10-2 10-1 100 101 102 Junction Temperature () Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10 10 A 6V V RG A 6V V RG Test Procedure I Test Procedure II 10 A 6V V RG Test Procedure III SEMIHOW REV.1.0 Jan 2006 HTS138-600 Package Dimensions HTS138-600 (TO-220F) Dimensions in Millimeters SEMIHOW REV.1.0 Jan 2006 |
Price & Availability of HTS138-600
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |